buffer layer造句
例句与造句
- Influence of hole buffer layer cupc on properties of organic light - emitting devices
效应及氮在其中的作用 - The middle class is a buffer layer in the structure of social interests
中间阶层是社会利益结构中的缓冲层。 - Adds a buffering layer to read and write operations on another stream
将缓冲层添加到另一个流上的读取和写入操作。 - Morphology of low temperature buffer layers and its influence on inp epilayer growth
低温缓冲层的表面形貌及对其外延层生长的影响 - Study on transmittance of zno based on transparent thin - film transistor with complex insulative buffer layer of al2o3 aln
附银二氧化钛光催化剂的制备及其光催化活性研究 - It's difficult to find buffer layer in a sentence. 用buffer layer造句挺难的
- The product is separated from the principle of suction by the absorption layer , a buffer layer , integrated sound insulation layer formed
该产品采用外隔内吸的原理，由吸声层，缓冲层，隔声层综合而成。 - ( 3 ) the effects of growth pressure of buffer layer on the growth of buffer layer and gan epitaxy , and the morphological evolution during high temperature growth have been investigated
( 3 )研究缓冲层生长压力对缓冲层生长、外延层生长及形貌变化的影响。 - It was found that there exist many nanometer - sized holes on the surface of sin buffer layers , and such porous sin layers probably could enhance the lateral growth
在氮化矽缓冲层表面可以发现许多奈米尺寸大小的孔洞，其特性相信可提升之后氮化镓侧向的磊晶成长。 - With optimized buffer layer growth parameters , gan epilayer with improved quality has been grown , whose fwhm of ( 0002 ) plane dc - xrd rocking curve is 6 arcmin
以优化的缓冲层生长条件得到质量有明显改善的gan外延层， gan薄膜的( 0002 )面双晶dc - xrd扫描的半高宽为6arcmin 。 - Under high drain voltage condition , the results proved that channel electrons are easily ejected into gan buffer layer and be trapped to induce current collapse
在大漏极电压条件下,沟道电子易于注入到gan缓冲层中,并被缓冲层中的陷阱所俘获,耗尽二维电子气,从而导致电流崩塌效应。 - ( 2 ) the ysz and sto buffer layers were prepared by sol - gel process on si substrates . the ysz and sto films could be used as the buffer layers between si substrate and ybco films
( 2 )用sol - gel法在si基板上制的钇稳定氧化锆( ysz )和钛酸锶( sto )薄膜作为si与ybco间的缓冲层是可行的。 - The layers from substrate to top of the deposited film are ti substrate , buffer layer ( interface between substrate and film ) , porous layer and lamellar layer
研究发现，从钛合金到羟基磷灰石共有四层结构：钛合金基体、钛合金的氧化层、多孔的纳米晶羟基磷灰石和花瓣状的结晶良好的羟基磷灰石。 - By means of quantitative analysis , we accessed growth rate and film thickness of gan epilayer , and even determined in real time the thickness of buffer layer from in situ measurements of normal incidence reflectance
通过对在位监测曲线的分析，确定gan生长速率以及外延层的厚度，并利用监测曲线实时标定缓冲层的厚度。 - This model described relationship of current collapse and traps in buffer layer , and the normalized product of electron mobility and 2deg density with and without current collapses was 0 . 95 vgs
该模型描述了电流崩塌效应与缓冲层中陷阱的相互关系,并获得了电流崩塌前后迁移率与二维电子气浓度乘积的归一化值0 . 95 vgs 。 - In order to deal with large mismatch ( 14 . 6 % at room temperature ) between gaas and insb , a insb buffer layer was deposited firstly at low temperature 350 , followed by a insb epilayer being deposited at higher temperature 440
为了克服insb与gaas间14 . 6 %的晶格失配度,实验设计先低温生长一定厚度的insb缓冲层,随后升温生长insb外延层。
更多例句： 下一页